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A Solution-Processed Operational Amplifier Using Direct Light-Patterned a-InGaZnO TFTs
- Issue Date
- May-2018
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Amorphous indium-gallium-zinc oxide (a-InGaZnO); operational amplifier (op-amp); solution process; thin-film transistors (TFTs)
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.5, pp.1796 - 1802
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 65
- Number
- 5
- Start Page
- 1796
- End Page
- 1802
- ISSN
- 0018-9383
- Abstract
- In this paper, we present a novel operational amplifier (op-amp) composed with solution-processed n-type amorphous indium-gallium-zinc-oxide (a-InGaZnO) thin-film transistors (TFTs). For patterning a-InGaZnO layer, we used direct light patterning method that drastically reduces the process steps and costs compared to conventional vacuum processes. The a-InGaZnO TFT-based op-amp was designed and fabricated on a glass substrate yielding a total gain of 24.6 dB, a cutoff frequency of 0.47 kHz, and a unit-gain frequency of 2.0 kHz at a supply voltage of +/- 15 V. Finally, by constituting a pulsewidth modulation controller with the proposed op-amp, we confirmed that the duty ratio and output voltage of the comparator and error amplifier could be altered with respect to the reference voltage, respectively.
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Related Researcher
- Lee, Ho jin
- College of Information Technology (Department of Electronic Engineering)