Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field
DC Field | Value | Language |
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dc.contributor.author | Park, Sung Min | - |
dc.contributor.author | Wang, Bo | - |
dc.contributor.author | Das, Saikat | - |
dc.contributor.author | Chae, Seung Chul | - |
dc.contributor.author | Chung, Jin-Seok | - |
dc.contributor.author | Yoon, Jong-Gul | - |
dc.contributor.author | Chen, Long-Qing | - |
dc.contributor.author | Yang, Sang Mo | - |
dc.contributor.author | Noh, Tae Won | - |
dc.date.available | 2019-03-13T01:45:06Z | - |
dc.date.created | 2018-09-12 | - |
dc.date.issued | 2018-05 | - |
dc.identifier.issn | 1748-3387 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/31714 | - |
dc.description.abstract | Flexoelectricity is an electromechanical coupling between electrical polarization and a strain gradient(1) that enables mechanical manipulation of polarization without applying an electrical bias(2,3). Recently, flexoelectricity was directly demonstrated by mechanically switching the out-of-plane polarization of a uniaxial system with a scanning probe microscope tip(3,4). However, the successful application of flexoelectricity in low-symmetry multiaxial ferroelectrics and therefore active manipulation of multiple domains via flexoelectricity have not yet been achieved. Here, we demonstrate that the symmetry-breaking flexoelectricity offers a powerful route for the selective control of multiple domain switching pathways in multiaxial ferroelectric materials. Specifically, we use a trailing flexoelectric field that is created by the motion of a mechanically loaded scanning probe microscope tip. By controlling the SPM scan direction, we can deterministically select either stable 71 degrees ferroelastic switching or 180 degrees ferroelectric switching in a multiferroic magnetoelectric BiFeO3 thin film. Phase-field simulations reveal that the amplified in-plane trailing flexoelectric field is essential for this domain engineering. Moreover, we show that mechanically switched domains have a good retention property. This work opens a new avenue for the deterministic selection of nanoscale ferroelectric domains in low-symmetry materials for non-volatile magnetoelectric devices and multilevel data storage. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.relation.isPartOf | NATURE NANOTECHNOLOGY | - |
dc.subject | THIN-FILMS | - |
dc.subject | POLARIZATION | - |
dc.subject | BIFEO3 | - |
dc.subject | CHARGE | - |
dc.title | Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field | - |
dc.type | Article | - |
dc.identifier.doi | 10.1038/s41565-018-0083-5 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | NATURE NANOTECHNOLOGY, v.13, no.5, pp.366 - 370 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000431481000014 | - |
dc.identifier.scopusid | 2-s2.0-85043461389 | - |
dc.citation.endPage | 370 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 366 | - |
dc.citation.title | NATURE NANOTECHNOLOGY | - |
dc.citation.volume | 13 | - |
dc.contributor.affiliatedAuthor | Chung, Jin-Seok | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | POLARIZATION | - |
dc.subject.keywordPlus | BIFEO3 | - |
dc.subject.keywordPlus | CHARGE | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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