The Effects of Fluoropolymer Gate-Dielectric on the Air Stability of MoS2 Field-Effect Transistors
- Authors
- Yoo, Geonwook; Ma, Jiyeon
- Issue Date
- Feb-2018
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- MoS2; Fluoropolymer; Hysteresis; Air Stability
- Citation
- SCIENCE OF ADVANCED MATERIALS, v.10, no.2, pp.181 - 184
- Journal Title
- SCIENCE OF ADVANCED MATERIALS
- Volume
- 10
- Number
- 2
- Start Page
- 181
- End Page
- 184
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/32011
- DOI
- 10.1166/sam.2018.3221
- ISSN
- 1947-2935
- Abstract
- We report the improved hysteresis and air stability of multilayer MoS2 FETs fabricated on a fluoropolymer CYTOP gate-dielectric layer. The fabricated devices, in comparison to the devices on a cross-linked Poly(4-vinylphenol) [PVP] layer, exhibit less hysteretic behavior in ambient as well as vacuum conditions and thus smaller hysteresis gap. Furthermore, the amount of threshold voltage shifts (Delta V-TH) over two months in the shelf is also reduced (0.6 +/- 1.2 V) compared to the devices on the PVP layer (-2.0 +/- 0.4 V). These improvements are attributed to less charge trapping effect by adsorbed oxygen and/or water molecules on the surface due to hydrophobic fluorine group, indicating the fluoropolymer gate-dielectric can be a good candidate for flexible low-power electronics with improved stability.
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