Spatially resolved characterization of plastic deformation induced by focused-ion beam processing in structured InGaN/GaN layers

Abstract

Polychromatic X-ray microbeam analysis (PXM) results of structural changes caused by FIB machining in nitride heterostructures are discussed in connection with micro-photoluminescence (μ-PL), fluorescent analysis, scanning electron (SEM) and transmission electron microscopy (TEM) data. It is shown that FIB processing distorts the lattice in the InGaN/GaN layer not only in the immediate vicinity of the processed area but also in surrounding volumes. A narrow amorphized top layer is formed in the direct ion beam impact area. © 2007 Materials Research Society.