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Effect of Al 2 O 3 Passivation on Electrical Properties of beta -Ga 2 O 3 Field-Effect Transistor
- Issue Date
- Apr-2019
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- passivation; surface depletion; Aluminum oxide; Electric breakdown; Field effect transistors; Passivation; Passivation; Stress; Surface depletion.
- Citation
- IEEE Journal of the Electron Devices Society, v.7, pp.512 - 516
- Journal Title
- IEEE Journal of the Electron Devices Society
- Volume
- 7
- Start Page
- 512
- End Page
- 516
- ISSN
- 2168-6734
- Abstract
- We report on the effect of Al2O3 surface passivation on electrical properties of beta-gallium oxide (β-Ga2O3) nanomembrane field-effect transistor (FET). The fabricated bottom-gate β-Ga2O3(100) FET exhibits enhanced channel conductance and reduced hysteresis after the conformal atomic layer deposited Al2O3 passivation investigated by high-resolution transmission electron microscope (HR-TEM) analysis. Moreover, abnormal positive threshold voltage (VTH) shifts under negative bias stress are turned into negative VTH shifts, and off-state breakdown characteristics is improved as well. A modeling work using physics-based TCAD shows reduced surface depletion effect after the surface passivation. The results demonstrate that high quality ALD-Al2O3 surface passivation is an effective method to improve electrical properties of the bottom-gate β-Ga2O3 FET and its device applications.
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Related Researcher
- Yoo, Geon wook
- College of Information Technology (Department of Electronic Engineering)