Deposition-Temperature-Mediated Selective Phase Transition Mechanism of VO2 Films
DC Field | Value | Language |
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dc.contributor.author | Lee, Dooyong | - |
dc.contributor.author | Yang, Donghyuk | - |
dc.contributor.author | Kim, Hyegyeong | - |
dc.contributor.author | Kim, Jiwoong | - |
dc.contributor.author | Song, Sehwan | - |
dc.contributor.author | Choi, Kyoung Soon | - |
dc.contributor.author | Bae, Jong-Seong | - |
dc.contributor.author | Lee, Jouhahn | - |
dc.contributor.author | Lee, Jaekwang | - |
dc.contributor.author | Lee, Yunsang | - |
dc.contributor.author | Yan, Jiafeng | - |
dc.contributor.author | Kim, Jaeyong | - |
dc.contributor.author | Park, Sungkyun | - |
dc.date.available | 2020-10-20T00:40:38Z | - |
dc.date.created | 2020-10-07 | - |
dc.date.issued | 2020-08 | - |
dc.identifier.issn | 1932-7447 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/39650 | - |
dc.description.abstract | A clear experimental explanation of the contribution of Mott and Peierls transitions to the insulator-metal transition (IMT) characteristics in vanadium dioxide (VO2) is still lacking. Examining the crystal and electronic structures of epitaxial VO2 films grown at various deposition temperatures, a Mott or a Peierls transition was observed. The VO2 film deposited at 500 degrees C showed suppressed Peierls transition characteristics because of the large in-plane compressive strain in the insulating phase. The VO2 films deposited at 600 and 650 degrees C had a higher IMT temperature because of the relaxation of both the in-plane and out-of-plane strain, and there were abundant V4+ states. Therefore, it was related to a collaborative Mott-Peierls transition. Finally, the VO2 film deposited at 720 degrees C showed a suppressed Mott transition because of the abundance of V-3(+) states in the insulating phase. Furthermore, an analysis of the electronic structure of the insulating and metallic phases using in situ X-ray photoelectron spectroscopy and X-ray absorption spectroscopy provide a complete band diagram to support the above explanation of the deposition-temperature-dependent IMT characteristics. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | JOURNAL OF PHYSICAL CHEMISTRY C | - |
dc.title | Deposition-Temperature-Mediated Selective Phase Transition Mechanism of VO2 Films | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acs.jpcc.0c03038 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICAL CHEMISTRY C, v.124, no.31, pp.17282 - 17289 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000562056100058 | - |
dc.identifier.scopusid | 2-s2.0-85090829110 | - |
dc.citation.endPage | 17289 | - |
dc.citation.number | 31 | - |
dc.citation.startPage | 17282 | - |
dc.citation.title | JOURNAL OF PHYSICAL CHEMISTRY C | - |
dc.citation.volume | 124 | - |
dc.contributor.affiliatedAuthor | Lee, Yunsang | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordPlus | METAL-INSULATOR-TRANSITION | - |
dc.subject.keywordPlus | VANADIUM DIOXIDE | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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