Deposition-Temperature-Mediated Selective Phase Transition Mechanism of VO2 Films
- Authors
- Lee, Dooyong; Yang, Donghyuk; Kim, Hyegyeong; Kim, Jiwoong; Song, Sehwan; Choi, Kyoung Soon; Bae, Jong-Seong; Lee, Jouhahn; Lee, Jaekwang; Lee, Yunsang; Yan, Jiafeng; Kim, Jaeyong; Park, Sungkyun
- Issue Date
- Aug-2020
- Publisher
- AMER CHEMICAL SOC
- Citation
- JOURNAL OF PHYSICAL CHEMISTRY C, v.124, no.31, pp.17282 - 17289
- Journal Title
- JOURNAL OF PHYSICAL CHEMISTRY C
- Volume
- 124
- Number
- 31
- Start Page
- 17282
- End Page
- 17289
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/39650
- DOI
- 10.1021/acs.jpcc.0c03038
- ISSN
- 1932-7447
- Abstract
- A clear experimental explanation of the contribution of Mott and Peierls transitions to the insulator-metal transition (IMT) characteristics in vanadium dioxide (VO2) is still lacking. Examining the crystal and electronic structures of epitaxial VO2 films grown at various deposition temperatures, a Mott or a Peierls transition was observed. The VO2 film deposited at 500 degrees C showed suppressed Peierls transition characteristics because of the large in-plane compressive strain in the insulating phase. The VO2 films deposited at 600 and 650 degrees C had a higher IMT temperature because of the relaxation of both the in-plane and out-of-plane strain, and there were abundant V4+ states. Therefore, it was related to a collaborative Mott-Peierls transition. Finally, the VO2 film deposited at 720 degrees C showed a suppressed Mott transition because of the abundance of V-3(+) states in the insulating phase. Furthermore, an analysis of the electronic structure of the insulating and metallic phases using in situ X-ray photoelectron spectroscopy and X-ray absorption spectroscopy provide a complete band diagram to support the above explanation of the deposition-temperature-dependent IMT characteristics.
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