Centimeter-sized epitaxial h-BN films
- Authors
- Oh, Hongseok; Jo, Janghyun; Tchoe, Youngbin; Yoon, Hosang; Lee, Hyun Hwi; Kim, Sung-Soo; Kim, Miyoung; Sohn, Byeong-Hyeok; Yi, Gyu-Chul
- Issue Date
- Nov-2016
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- NPG ASIA MATERIALS, v.8
- Journal Title
- NPG ASIA MATERIALS
- Volume
- 8
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/40495
- DOI
- 10.1038/am.2016.178
- ISSN
- 1884-4049
- Abstract
- We report the growth and transfer of centimeter-sized, epitaxial hexagonal boron nitride (h-BN) few-layer films using Ni(111) single-crystal substrates. The h-BN films were heteroepitaxially grown on 10 x 10 mm(2) or 20 x 20 mm(2) Ni(111) substrates using atmospheric pressure chemical vapor deposition with a single ammonia-borane precursor. The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and the remaining Ni(111) substrates were repeatedly re-used. A careful analysis of the growth parameters revealed that the crystallinity and area coverage of the h-BN films were mostly sensitive to the sublimation temperature of the ammonia-borane source. Moreover, various physical characterizations confirmed that the grown films exhibited the typical characteristics of hexagonal boron nitride layers over the entire area. Furthermore, the heteroepitaxial relationship between h-BN and Ni(111) and the overall crystallinity of the film were thoroughly investigated using a synchrotron radiation X-ray diffraction analysis including theta-2. scans, grazing incident diffraction, and reciprocal space mapping. The crystallinity at the microscopic scale was further investigated using transmission electron microscopy (TEM)-based techniques, including selective area electron diffraction pattern mapping, electron back-scattered diffraction, and high-resolution
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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