Ultrathin monolithic HfO2 formed by Hf-seeded atomic layer deposition on MoS2: Film characteristics and its transistor application (vol 673, pg 112, 2019)

Kim, Hoijoon; Park, Taejin; Park, Seongjae; Leem, Mirine; Ahn, Wonsik; Lee, Hyangsook; Lee, Changmin; Lee, Eunha; Jeong, Seong-Jun; Park, Seongjun; Kim, Yunseok; Kim, Hyoungsub

doi:10.1016/j.tsf.2021.138544

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Ultrathin monolithic HfO2 formed by Hf-seeded atomic layer deposition on MoS2: Film characteristics and its transistor application (vol 673, pg 112, 2019)

Authors: Kim, Hoijoon; Park, Taejin; Park, Seongjae; Leem, Mirine; Ahn, Wonsik; Lee, Hyangsook; Lee, Changmin; Lee, Eunha; Jeong, Seong-Jun; Park, Seongjun; Kim, Yunseok; Kim, Hyoungsub

Issue Date: Mar-2021

Publisher: ELSEVIER SCIENCE SA

Citation: THIN SOLID FILMS, v.721

Journal Title: THIN SOLID FILMS

Volume: 721

URI: http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/40691

DOI: 10.1016/j.tsf.2021.138544

ISSN: 0040-6090

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Appears in Collections: College of Engineering > ETC > 1. Journal Articles

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