Trap Reduction through O-3 Post-Deposition Treatment of Y2O3 Thin Films Grown by Atomic Layer Deposition on Ge Substrates
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Dong Gun | - |
dc.contributor.author | Kwon, Dae Seon | - |
dc.contributor.author | Lim, Junil | - |
dc.contributor.author | Seo, Haengha | - |
dc.contributor.author | Kim, Tae Kyun | - |
dc.contributor.author | Lee, Woongkyu | - |
dc.contributor.author | Hwang, Cheol Seong | - |
dc.date.accessioned | 2022-10-14T08:40:07Z | - |
dc.date.available | 2022-10-14T08:40:07Z | - |
dc.date.created | 2022-10-14 | - |
dc.date.issued | 2021-02 | - |
dc.identifier.issn | 2199-160X | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/42524 | - |
dc.description.abstract | For Ge-based metal-oxide-semiconductor field-effect transistor application, high-k Y2O3 thin films are deposited on Ge single-crystal substrate using atomic layer deposition. The primary drawbacks of a metal-oxide-semiconductor capacitor with pristine Y2O3 are large hysteresis and high leakage current. Through forming gas annealing (FGA), the leakage current can be reduced by approximately three orders of magnitude, along with the reduction of interface trap density. However, there is still a large hysteresis in the capacitance-voltage curves. O-3 post-deposition annealing (OPA) is used to solve the problem. The formation of the YGeOx interfacial layer through OPA and the reduction of the defect level of the Y2O3 thin film effectively decrease the hysteresis, which also decreases the leakage current. Additionally, the hysteresis is 690 mV when only FGA is performed. However, it is further reduced to 260 mV through OPA. Moreover, the remote oxygen scavenging effect using TiN/Pt electrodes prevents an unintentional increase in equivalent oxide thickness (EOT). The 4.7 nm thick Y2O3 film results in an EOT of 1.77 nm and leakage current density of 2.1 x 10(-7) A cm(-2) (at flat band voltage-1 V) after the OPA. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY | - |
dc.relation.isPartOf | ADVANCED ELECTRONIC MATERIALS | - |
dc.title | Trap Reduction through O-3 Post-Deposition Treatment of Y2O3 Thin Films Grown by Atomic Layer Deposition on Ge Substrates | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/aelm.202000819 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ADVANCED ELECTRONIC MATERIALS, v.7, no.2 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000606947300001 | - |
dc.citation.number | 2 | - |
dc.citation.title | ADVANCED ELECTRONIC MATERIALS | - |
dc.citation.volume | 7 | - |
dc.contributor.affiliatedAuthor | Lee, Woongkyu | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordAuthor | Ge substrates | - |
dc.subject.keywordAuthor | high-k dielectrics | - |
dc.subject.keywordAuthor | MOS capacitors | - |
dc.subject.keywordAuthor | O-3 treatment | - |
dc.subject.keywordAuthor | oxygen scavenging effect | - |
dc.subject.keywordAuthor | Y2O3 | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Soongsil University Library 369 Sangdo-Ro, Dongjak-Gu, Seoul, Korea (06978)02-820-0733
COPYRIGHT ⓒ SOONGSIL UNIVERSITY, ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.