Substrate-Dependent Growth Behavior of Atomic-Layer-Deposited Zinc Oxide and Zinc Tin Oxide Thin Films for Thin-Film Transistor Applications
DC Field | Value | Language |
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dc.contributor.author | Kim, Jun Shik | - |
dc.contributor.author | Jang, Younjin | - |
dc.contributor.author | Kang, Sukin | - |
dc.contributor.author | Lee, Yonghee | - |
dc.contributor.author | Kim, Kwangmin | - |
dc.contributor.author | Kim, Whayoung | - |
dc.contributor.author | Lee, Woongkyu | - |
dc.contributor.author | Hwang, Cheol Seong | - |
dc.date.accessioned | 2022-10-14T08:40:10Z | - |
dc.date.available | 2022-10-14T08:40:10Z | - |
dc.date.created | 2022-10-14 | - |
dc.date.issued | 2020-12 | - |
dc.identifier.issn | 1932-7447 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/42528 | - |
dc.description.abstract | The growth behaviors and electrical performances of semiconducting ZnO, SnO2, and (Zn,Sn)O-x thin films, grown by atomic layer deposition (ALD) using O-3 as the oxygen source, were studied. A significant incubation stage was observed for ZnO ALD on the Si substrate, but not for the SnO2 thin-film substrate. The incubation cycles, along with the grain size, were increased with O-3 feeding time, implying that the reactivity of the Zn-precursor varied with the degree of oxidation of the Si surface. The adsorption of the Zn-precursor in the early stage of (Zn,Sn)O-x ALD was facilitated with an increasing concentration ratio of Sn to Zn. The electrical performance of the (Zn,Sn)O-x film as a channel layer was estimated by fabricating bottom-gate thin-film transistors (TFTs). The TFT transfer curves showed an evident negative shift of threshold voltage as the Sn-concentration increased in (Zn,Sn)O-x films. The best electrical performance of the oxide TFTs was observed when the Sn-concentration was 40 at % with a threshold voltage of -0.12 V, subthreshold swing of 0.33 V decade(-1), field-effect mobility of 13.6 cm(2 )V(-1) s(-1), and saturation mobility of 6.20 cm(2) V-1 s(-1). The amorphous structure of the films could be retained up to 600 degrees C of post-annealing. These performances are promising for the next-generation TFT for a vertical NAND flash or cell-stacked dynamic random access memory. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | JOURNAL OF PHYSICAL CHEMISTRY C | - |
dc.title | Substrate-Dependent Growth Behavior of Atomic-Layer-Deposited Zinc Oxide and Zinc Tin Oxide Thin Films for Thin-Film Transistor Applications | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acs.jpcc.0c07800 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICAL CHEMISTRY C, v.124, no.49, pp.26780 - 26792 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000599610500026 | - |
dc.citation.endPage | 26792 | - |
dc.citation.number | 49 | - |
dc.citation.startPage | 26780 | - |
dc.citation.title | JOURNAL OF PHYSICAL CHEMISTRY C | - |
dc.citation.volume | 124 | - |
dc.contributor.affiliatedAuthor | Lee, Woongkyu | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
dc.subject.keywordPlus | HAFNIUM OXIDE | - |
dc.subject.keywordPlus | SRTIO3 FILMS | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | PRECURSOR | - |
dc.subject.keywordPlus | OXYGEN | - |
dc.subject.keywordPlus | OZONE | - |
dc.subject.keywordPlus | ALD | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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