Effect of the Annealing Temperature of the Seed Layer on the Following Main Layer in Atomic-Layer-Deposited SrTiO3 Thin Films
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sang Hyeon | - |
dc.contributor.author | Lee, Woongkyu | - |
dc.contributor.author | An, Cheol Hyun | - |
dc.contributor.author | Kim, Dong-Gun | - |
dc.contributor.author | Kwon, Dae Seon | - |
dc.contributor.author | Cho, Seong Tak | - |
dc.contributor.author | Cha, Soon Hyung | - |
dc.contributor.author | Lim, Jun Il | - |
dc.contributor.author | Hwang, Cheol Seong | - |
dc.date.accessioned | 2022-10-14T08:40:13Z | - |
dc.date.available | 2022-10-14T08:40:13Z | - |
dc.date.created | 2022-10-14 | - |
dc.date.issued | 2019-05 | - |
dc.identifier.issn | 1862-6254 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/42534 | - |
dc.description.abstract | SrTiO3 (STO) films are grown via atomic layer deposition at 370 degrees C with a two-step growth method. A 5-nm-thick seed layer is first deposited and annealed via rapid thermal annealing (RTA) at temperatures ranging from 450 to 650 degrees C, and the main layer is subsequently grown on the annealed seed layer for in situ crystallization. When the RTA temperature is 500 degrees C or lower, the seed layer remains amorphous, and the main layer is also grown in the amorphous phase. At the 550 degrees C seed annealing temperature, the STO film is partially crystallized, and at the higher annealing temperature, the STO main layer is fully crystallized. The oxygen diffuses through the vertically aligned grain-boundaries during the crystallized film growth, which induces the oxidation-reduction reaction of the underlying Ru substrate. This reaction causes a higher growth rate in the crystalline phase. The large growth rate difference between the amorphous and crystalline regions induces a severe roughening of the main layer. When RTA is done at 600 degrees C, the film is mostly crystallized, and the main layer becomes smooth again. Consequently, a 0.52nm equivalent oxide thickness is achieved with the low leakage current of 2.5x10(-8)Acm(-2) at the 0.8V applied bias. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.relation.isPartOf | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | - |
dc.title | Effect of the Annealing Temperature of the Seed Layer on the Following Main Layer in Atomic-Layer-Deposited SrTiO3 Thin Films | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/pssr.201800557 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.13, no.5 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000471310100006 | - |
dc.citation.number | 5 | - |
dc.citation.title | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | - |
dc.citation.volume | 13 | - |
dc.contributor.affiliatedAuthor | Lee, Woongkyu | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | DRAM capacitors | - |
dc.subject.keywordAuthor | seed layers | - |
dc.subject.keywordAuthor | SrTiO3 | - |
dc.subject.keywordAuthor | two-step growth | - |
dc.subject.keywordPlus | INITIAL GROWTH-BEHAVIOR | - |
dc.subject.keywordPlus | STOICHIOMETRY | - |
dc.subject.keywordPlus | CAPACITORS | - |
dc.subject.keywordPlus | SRXTIYOZ | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Soongsil University Library 369 Sangdo-Ro, Dongjak-Gu, Seoul, Korea (06978)02-820-0733
COPYRIGHT ⓒ SOONGSIL UNIVERSITY, ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.