Controlling the Electrical Characteristics of ZrO2/Al2O3/ZrO2 Capacitors by Adopting a Ru Top Electrode Grown via Atomic Layer Deposition
DC Field | Value | Language |
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dc.contributor.author | An, Cheol Hyun | - |
dc.contributor.author | Lee, Woongkyu | - |
dc.contributor.author | Kim, Sang Hyeon | - |
dc.contributor.author | Cho, Cheol Jin | - |
dc.contributor.author | Kim, Dong-Gun | - |
dc.contributor.author | Kwon, Dae Seon | - |
dc.contributor.author | Cho, Seong Tak | - |
dc.contributor.author | Cha, Soon Hyung | - |
dc.contributor.author | Lim, Jun Il | - |
dc.contributor.author | Jeon, Woojin | - |
dc.contributor.author | Hwang, Cheol Seong | - |
dc.date.accessioned | 2022-10-14T08:40:15Z | - |
dc.date.available | 2022-10-14T08:40:15Z | - |
dc.date.created | 2022-10-14 | - |
dc.date.issued | 2019-03 | - |
dc.identifier.issn | 1862-6254 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/42536 | - |
dc.description.abstract | The electrical characteristics of metal-insulator-metal (MIM) capacitors consisting of a ZrO2/Al2O3/ZrO2 (ZAZ) dielectric film, a TiN bottom electrode (BE), and two different top electrodes (TEs; TiN and Ru) are examined. The enhanced property in the leakage current density versus equivalent oxide thickness (J-t(ox)) plot is observed in the MIM structure with the Ru TE for the ZAZ film with specific film thickness of approximate to 4.6 nm. Especially, the J due to the electron injection from the TiN BE was significantly decreased for the Ru TE case compared to the TiN TE sample at 1-2 MV cm(-1) electric field region. These extraordinary behaviors are found to have originated the change in the oxygen vacancy density in the ZAZ film, which induces Poole-Frenkel emission through the reaction with the active oxygen during the Ru TE fabrication process. The difference in nonlinearity of the capacitance-voltage (C-V) curve also indicates a different trap density at the interface of ZAZ and the TiN BE, suggesting a change in the oxygen vacancy density in the ZAZ film. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.relation.isPartOf | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | - |
dc.title | Controlling the Electrical Characteristics of ZrO2/Al2O3/ZrO2 Capacitors by Adopting a Ru Top Electrode Grown via Atomic Layer Deposition | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/pssr.201800454 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.13, no.3 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000460697100017 | - |
dc.citation.number | 3 | - |
dc.citation.title | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | - |
dc.citation.volume | 13 | - |
dc.contributor.affiliatedAuthor | Lee, Woongkyu | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | DRAM capacitors | - |
dc.subject.keywordAuthor | electrodes | - |
dc.subject.keywordAuthor | Ru | - |
dc.subject.keywordAuthor | ZrO2/Al2O3/ZrO2 | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | EQUIVALENT OXIDE THICKNESS | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | BEHAVIOR | - |
dc.subject.keywordPlus | NM | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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