High-performance Atomic-Layer-Deposited SnO thin film transistors fabricated by intense pulsed light annealing
- Authors
- Kim, Jina; Chae, Myeong Gil; Han, Young Joon; Choi, Jun; Cho, Kwan Hyun; Choi, Heenang; Park, Bo Keun; Chung, Taek-Mo; Lee, Woongkyu; Han, Jeong Hwan
- Issue Date
- Jan-2023
- Publisher
- ELSEVIER
- Keywords
- SnO; P-type; Oxide semiconductor; Thin-film transistor; Atomic layer deposition; Intense pulsed light annealing
- Citation
- APPLIED SURFACE SCIENCE, v.609
- Journal Title
- APPLIED SURFACE SCIENCE
- Volume
- 609
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/43460
- DOI
- 10.1016/j.apsusc.2022.155281
- ISSN
- 0169-4332
- Abstract
- In this study, SnO films were grown by atomic layer deposition using Sn(dmamp)(2) and H2O as the Sn-precursor and reactant, respectively, at a low temperature of 120 degrees C. Intense pulsed light (IPL) annealing was employed to obtain high-quality polycrystalline SnO films with excellent hole transport characteristics. The amorphous SnO film could be crystallized by IPL annealing, particularly at a light pulse number between 200 and 300, and the degree of crystallinity increased with increasing IPL treatment. The Sn2+ oxidation state of the SnO film was almost maintained after IPL annealing, with no apparent phase transformation from SnO to SnO2 or Sn. In addition, the IPL-annealed SnO films exhibited a smooth surface morphology with a root-mean-squared roughness of 0.22-0.50 nm. Finally, bottom-gated staggered-structured thin-film transistors (TFTs) were fabricated with 6-30 nm-thick IPL-annealed SnO channel layers. Excellent p-type SnO-based TFT performance was achieved with a field-effect hole mobility of 4.31 cm(2)/V.s and an on-to-off current ratio of 8.2 x 10(4).
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