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A Fully Passive Noise-Shaping SAR ADC Utilizing Last-Bit Majority Voting and Cyclic Dynamic Element Matching Techniques

Authors
Hwang, Young-HaSong, YoonhoPark, Jun-EunJeong, Deog-Kyoon
Issue Date
Oct-2022
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Analog-to-digital converter (ADC); dynamic element matching (DEM); majority voting; noise shaping (NS); successive approximation
Citation
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, v.30, no.10, pp.1381 - 1390
Journal Title
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
Volume
30
Number
10
Start Page
1381
End Page
1390
URI
http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/43509
DOI
10.1109/TVLSI.2022.3190927
ISSN
1063-8210
Abstract
This article presents a fully passive noise-shaping (NS) successive approximation register (SAR) analog-to-digital converter (ADC) that can be compatible with dynamic voltage and frequency scaling (DVFS) schemes while offering a 12-bit resolution for Internet-of-Things (IoT) sensor applications. To realize a voltage-scalable suppression of the in-band quantization noise, the proposed ADC utilizes a second-order cascade of integrators with feedforward (CIFF) NS loop with a 3-input dynamic comparator, which can obtain an additional resolution of more than 3 hits. A cyclic dynamic element matching (CDEM) for MSB is seamlessly combined with the NS operation and simply realized by shift registers (SRs). The MSB CDEM reduces dominant in-band harmonic distortions due to capacitor mismatch by not only averaging out but also randomizing the MSB mismatch errors with modulation dither from the CIFF NS loop. In addition, a last-bit majority voting (LMV) technique is applied when resolving the LSB to reduce the comparator noise by half with four additional cycles. With both the LMV and CDEM techniques enabled, the SNR and SNDR are enhanced to 73.3 and 72.3 dB, respectively. The ADC achieves an ENOB of 11.2-11.7 bits with a reconfigurable bandwidth of 10-50 kHz at a supply voltage of 0.6-1 V. The prototype ADC was fabricated using 28-nm CMOS technology, occupying an active area of 0.0575 mm(2).
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