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Heteroepitaxial alpha-Ga2O3 MOSFETs with a 2.3 kV breakdown voltage grown by halide vapor-phase epitaxy
- Authors
- Jeong, Yeong Je; Park, Ji-Hyeon; Yeom, Min Jae; Kang, Inho; Yang, Jeong Yong; Kim, Hyeong-Yun; Jeon, Dae-Woo; Yoo, Geonwook
- Issue Date
- Jul-2022
- Publisher
- IOP Publishing Ltd
- Keywords
- alpha-Ga2O3; breakdown; halide vapor-phase epitaxy; hetero-epitaxy; MOSFETs; contact resistance
- Citation
- APPLIED PHYSICS EXPRESS, v.15, no.7
- Journal Title
- APPLIED PHYSICS EXPRESS
- Volume
- 15
- Number
- 7
- ISSN
- 1882-0778
- Abstract
- Here, we report on heteroepitaxial alpha-Ga2O3 MOSFETs with a breakdown voltage (BV) of 2.3 kV at a specific on-resistance of 335 m omega cm(2). High-quality alpha-Ga2O3 layers were grown on a sapphire substrate via halide vapor-phase epitaxy (HVPE). A stack of Ti/Al/Ni/Au was used for the S/D electrode, exhibiting significantly reduced contact resistance as compared with a conventional Ti/Au stack. Consequently, the record BV and mobility of 20.4 cm(2) V-1 s(-1) were achieved. Moreover, a consistent critical field of 1 MV cm(-1) was obtained for variable L-GD. Our results are superior to recently reported heteroepitaxial alpha-/beta-Ga2O3 MOSFETs, which is promising toward HVPE alpha-Ga2O3 based power devices. (C) 2022 The Japan Society of Applied Physics
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Related Researcher
- Yoo, Geon wook
- College of Information Technology (Department of Electronic Engineering)