IGZO thin-film transistors with tunneling contacts: towards power efficient display
- Authors
- Kim, Jaewon; Oh, Seunghyeon; Jo, Hyerin; Oh, Hongseok
- Issue Date
- May-2023
- Publisher
- IOP Publishing Ltd
- Keywords
- thin film transistors; tunnel contact transistors; source gated transistors; IGZO; display
- Citation
- APPLIED PHYSICS EXPRESS, v.16, no.5
- Journal Title
- APPLIED PHYSICS EXPRESS
- Volume
- 16
- Number
- 5
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/43962
- DOI
- 10.35848/1882-0786/acd5a8
- ISSN
- 1882-0778
- Abstract
- We report the fabrication and characterization of indium gallium zinc oxide (IGZO) tunneling thin-film transistors. Both the IGZO channel and an Al2O3 tunneling barrier layer were deposited using the radio-frequency magnetron sputtering method. Compared with a conventional device, our device exhibited rapid saturation at a much smaller drain bias. Interestingly, we observed two different current saturation mechanisms within a single device, which can be explained as competition between the depletion envelope near the source electrode and channel depletion near the drain electrode. This work represents an industry-friendly method for implementing the tunnel-contact approach in the display industry.
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