Three-Stacked CMOS Power Amplifier to Increase Output Power With Stability Enhancement for mm-Wave Beamforming Systems
- Authors
- Jeong, Hayeon; Lee, Hui Dong; Park, Bonghyuk; Jang, Seunghyun; Kong, Sunwoo; Park, Changkun
- Issue Date
- Jun-2023
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Complementary metal-oxide-semiconductor (CMOS); flexible access common spectrum (FACS); mm-Wave; power amplifiers (PAs); stability
- Citation
- IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.71, no.6, pp.2450 - 2464
- Journal Title
- IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
- Volume
- 71
- Number
- 6
- Start Page
- 2450
- End Page
- 2464
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/44129
- DOI
- 10.1109/TMTT.2022.3228539
- ISSN
- 0018-9480
- Abstract
- In this study, an mm-wave band complementary metal-oxide-semiconductor (CMOS) power amplifier (PA) with a two-stage differential structure was designed. An analysis of the designed PA is presented and a new structure is proposed to eliminate the possibility of oscillation in the PA, which has high gain and high output power. The designed driver stage consists of a pair of cascode amplifiers and can be advantageously applied in beamforming systems as the PA phase is converted to 0 degrees/180 degrees with the on/off of a common-gate (CG) bias voltage. The power stage was designed with a three-stacked structure to obtain a high output power. The stability was improved using RC and capacitive feedbacks in the power stage. We implemented the PA using the 65-nm RF CMOS process. The designed PA used supply voltages of 2.0 and 3.3 V for the driver and power stages, respectively, and its saturated output power was measured as 24.7 dBm at 22.0 GHz. In this case, P-1,P-dB was 20.6 dBm and the peak power added efficiency (PAE) was 26.0%.
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