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Oxygen Partial Pressure during Pulsed Laser Deposition: Deterministic Role on Thermodynamic Stability of Atomic Termination Sequence at SrRuO3/BaTiO3 Interface

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dc.contributor.authorShin, Yeong Jae-
dc.contributor.authorWang, Lingfei-
dc.contributor.authorKim, Yoonkoo-
dc.contributor.authorNahm, Ho-Hyun-
dc.contributor.authorLee, Daesu-
dc.contributor.authorKim, Jeong Rae-
dc.contributor.authorYang, San Mo-
dc.contributor.authorYoon, Jong-Gul-
dc.contributor.authorChung, Jin-Seok-
dc.contributor.authorKim, Miyoung-
dc.contributor.authorChang, Seo Hyoung-
dc.contributor.authorNoh, Tae Won-
dc.date.available2018-05-08T14:37:34Z-
dc.date.created2018-04-17-
dc.date.issued2017-08-16-
dc.identifier.issn1944-8244-
dc.identifier.urihttp://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/6277-
dc.description.abstractWith recent trends on miniaturizing oxide-baed devices, the need for atomic-scale control of surface/interface structures by pulsed laser deposition (PLD) has increased. In particular, realizing uniform atomic termination at the surface/ interface is highly desirable. However, a lack of understanding on the surface formation mechanism in PLD has limited a deliberate control of surface/interface atomic stacking sequences. Here, taking the prototypical-SrRuO3/BaTiO3/SrRuO3 (SRO/BTO/SRO) heterostructure as a model system, we investigated the formation of different interfacial termination sequences (BaO-RuO2 or TiO2-SrO) with oxygen partial pressure (PO2) during PLD. We found that a uniform SrO TiO2 termination sequence at the SRO/BTO interface can be achieved by lowering the Po-2 to 5 mTorr, regardless of the total background gas pressure (P-total), growth mode, or growth rate. Our results indicate that the thermodynamic stability of the BTO surface at the low-energy kinetics stage of PLD can play an important role in surface/interface termination formation. This work paves the way for realizing termination engineering in functional oxide heterostructures.-
dc.publisherAMER CHEMICAL SOC-
dc.relation.isPartOfACS APPLIED MATERIALS & INTERFACES-
dc.subjectFERROELECTRIC TUNNEL-JUNCTIONS-
dc.subjectTHIN-FILMS-
dc.subjectOXIDE INTERFACES-
dc.subjectGROWTH-
dc.subjectPOLARIZATION-
dc.subjectSRTIO3-
dc.subjectELECTRORESISTANCE-
dc.subjectSTOICHIOMETRY-
dc.subjectBARRIER-
dc.subjectGAS-
dc.titleOxygen Partial Pressure during Pulsed Laser Deposition: Deterministic Role on Thermodynamic Stability of Atomic Termination Sequence at SrRuO3/BaTiO3 Interface-
dc.typeArticle-
dc.identifier.doi10.1021/acsami.7b07813-
dc.type.rimsART-
dc.identifier.bibliographicCitationACS APPLIED MATERIALS & INTERFACES, v.9, no.32, pp.27305 - 27312-
dc.description.journalClass1-
dc.identifier.wosid000408178400073-
dc.identifier.scopusid2-s2.0-85027410779-
dc.citation.endPage27312-
dc.citation.number32-
dc.citation.startPage27305-
dc.citation.titleACS APPLIED MATERIALS & INTERFACES-
dc.citation.volume9-
dc.contributor.affiliatedAuthorChung, Jin-Seok-
dc.type.docTypeArticle-
dc.description.oadoiVersionsubmitted-
dc.subject.keywordAuthorferroelectric-
dc.subject.keywordAuthorinterface engineering-
dc.subject.keywordAuthoroxide heterostructure-
dc.subject.keywordAuthorpulsed laser deposition-
dc.subject.keywordAuthorthermodynamic surface stability-
dc.subject.keywordPlusFERROELECTRIC TUNNEL-JUNCTIONS-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusOXIDE INTERFACES-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusPOLARIZATION-
dc.subject.keywordPlusSRTIO3-
dc.subject.keywordPlusELECTRORESISTANCE-
dc.subject.keywordPlusSTOICHIOMETRY-
dc.subject.keywordPlusBARRIER-
dc.subject.keywordPlusGAS-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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