Low-Voltage 2D Material Field-Effect Transistors Enabled by Ion Gel Capacitive Coupling
- Authors
- Choi, Yongsuk; Kang, Junmo; Jariwala, Deep; Wells, Spencer A.; Kang, Moon Sung; Marks, Tobin J.; Hersam, Mark C.; Cho, Jeong Ho
- Issue Date
- 9-May-2017
- Publisher
- AMER CHEMICAL SOC
- Citation
- CHEMISTRY OF MATERIALS, v.29, no.9, pp.4008 - 4013
- Journal Title
- CHEMISTRY OF MATERIALS
- Volume
- 29
- Number
- 9
- Start Page
- 4008
- End Page
- 4013
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/6371
- DOI
- 10.1021/acs.chemmater.7b00573
- ISSN
- 0897-4756
- Abstract
- Capacitive coupling between an overlying ion gel electrolyte and an underlying oxide thin film is utilized to substantially suppress the operating voltage of field-effect transistors (FETs) based on two-dimensional (2D) transition metal dichalcogenides and black phosphorus. The coupling of the layers is achieved following device fabrication by laminating an ion gel layer over an oxide-gated 2D FET through solution-casting methods. While the original pristine 2D FET requires tens of volts for gating through the oxide layer, the laminated ion gel layer reduces the operating voltage to below 4 V even when the same underlying substrate is used as the back gate electrode. Moreover, this capacitive coupling approach allows low-voltage operation without compromising the off-current level, which often occurs when ion gel electrolytes are directly employed as the gate dielectric material. This approach can likely be generalized to a wide variety of thin-film FETs as a postfabrication method for reducing operating voltages and power consumption.
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Collections - College of Engineering > Department of Chemical Engineering > 1. Journal Articles
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