AlXGa1-XN Cladding Effect on Intraband Absorption of InGaN Disk Embedded in GaN Nanowire
- Authors
- Akter, Afroja; Yoo, Geonwook; Kim, Sangin; Baac, Hyoung Won; Heo, Junseok
- Issue Date
- May-2017
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Intraband; Absorption; Nanowire; GaN
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp.3279 - 3284
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 17
- Number
- 5
- Start Page
- 3279
- End Page
- 3284
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/6377
- DOI
- 10.1166/jnn.2017.14060
- ISSN
- 1533-4880
- Abstract
- The electronic intraband absorption in InGaN nanodisks embedded in GaN nanowires with several kinds of cladding materials and without cladding was theoretically investigated. The cladding layer was 5 nm thick, and AlN, GaN, and Al0.4Ga0.6N were considered. The strain distribution, internal electric field, and intraband absorption in the nanodisks were calculated using the elastic energy minimization method and the single-band Schrodinger equation implemented in Nextnano3. For a plain nanowire without cladding, an inhomogeneous strain in the disk caused a piezoelectric field and deformation potential, yielding band-bending and a higher electron probability density in the periphery of the disk. An InGaN nanodisk embedded in a cladding GaN nanowire exhibited a higher intraband absorption. The case of the GaN cladding was optimal owing to the homogeneous surroundings of the disk.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Information Technology > ETC > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/6377)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.