Large-Area CVD-Grown Sub-2 V ReS2 Transistors and Logic Gates

Abstract

We demonstrated the fabrication of large-area ReS2 transistors and logic gates composed of a chemical vapor deposition (CVD)-grown multilayer ReS2 semiconductor, channel and graphene electrodes. Single-layer graphene was used as the source/drain and coplanar gate electrodes. Anion gel with an, ultrahigh capacitance effectively,gated the ReS2 channel at a low voltage, below 2 V, through a coplanar gate: The.contact resistance of the ion gel-gated ReS2 transistors with graphene electrodes decreased dramatically compared with the SiO2-devices prepared with Cr electrodes, The resulting transisiors exhibited good device performance, including a maximum electron mobility of 0:9 cm(2)/(V s) and an on/off current ratio exceeding 10(4). NMOS logic devices, such as NOT, NAND, and NOR, gates, were assembled using the resulting transistors as a proof of concept demonstration of the applicability of the devices. to complex logic circuits. The large-area synthesis of ReS2 semiconductors and graphene electrodes and their applications in logic devices open up new opportunities for realizing future flexible electronics based on 2D nanornaterials.