Direct analytical method of contact position effects on the energy-level alignments at organic semiconductor/electrode interfaces using photoemission spectroscopy combined with Ar gas cluster ion beam sputtering
- Authors
- Yun, Dong-Jin; Chung, JaeGwan; Kim, Seong Heon; Kim, Yongsu; Park, SungHoon; Seol, Minsu; Heo, Sung
- Issue Date
- 20-Nov-2015
- Publisher
- IOP PUBLISHING LTD
- Keywords
- energy level alignment; organic semiconductor/electrode interface; Ar gas cluster ion beam; photoemission spectroscopy
- Citation
- NANOTECHNOLOGY, v.26, no.46
- Journal Title
- NANOTECHNOLOGY
- Volume
- 26
- Number
- 46
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/8575
- DOI
- 10.1088/0957-4484/26/46/465704
- ISSN
- 0957-4484
- Abstract
- Poly(3, 4-ethylenedioxythiophene) (PEDOT) polymerized with poly(4-styrenesulfonate) (PSS) is one of the most widely used conducting organic electrodes owing to its outstanding optical/electrical properties and high work function. Because its work function depends significantly on the molecular arrangements between PEDOT and PSS molecules on the surface, the contact position of PEDOT: PSS films on organic semiconductors (OSCs) must also be an essential consideration. However, existing analysis methods based on in situ deposition/analysis are limited in their ability to accurately investigate the electronic structures of the buried interface regions under the solution-processed electrode or OSC layer in organic devices. Therefore, to overcome such limitations, we propose a top-down method based on photoemission spectroscopy analysis combined with Ar gas cluster ion beam (GCIB) sputtering. Through this method, both energy-level alignments and molecular distributions at various OSC/electrode interfaces can be successfully characterized without reference to any deposition process.
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