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Electrolyte-Gated Graphene Schottky Barrier Transistors
- Issue Date
- 21-Oct-2015
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- graphene; ion gels; low-voltage operations; organic semiconductors; Schottky barrier transistors
- Citation
- ADVANCED MATERIALS, v.27, no.39, pp.5875 - 5881
- Journal Title
- ADVANCED MATERIALS
- Volume
- 27
- Number
- 39
- Start Page
- 5875
- End Page
- 5881
- ISSN
- 0935-9648
- Abstract
- A new device architecture for flexible vertical Schottky barrier (SB) transistors and logic gates based on graphene-organic-semiconductor-metal heterostructures and ion gel gate dielectrics is demonstrated. The devices show well-behaved p-and n-type characteristics under low-voltage operation (< 1 V), yielding high current densities (> 100 mA cm(-2)) and on/off current ratios (> 10(3)).
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Collections - College of Engineering > Department of Chemical Engineering > 1. Journal Articles
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