Binary mask estimation for noise reduction based on instantaneous SNR estimation using Bayes risk minimisation
- Authors
- Kim, Gibak
- Issue Date
- 19-Mar-2015
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Keywords
- power semiconductor devices; aluminium compounds; gallium compounds; III-V semiconductors; wide band gap semiconductors; etching; gate power devices; energy loss turn-off; etching process; gate region; device performance; hole trapping; turn-off gate voltages; AlGaN-GaN
- Citation
- ELECTRONICS LETTERS, v.51, no.6, pp.526 - 527
- Journal Title
- ELECTRONICS LETTERS
- Volume
- 51
- Number
- 6
- Start Page
- 526
- End Page
- 527
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/8778
- DOI
- 10.1049/el.2014.4448
- ISSN
- 0013-5194
- Abstract
- In p-GaN gate AlGaN/GaN power devices, the p-GaN etching process to define the gate region is critical to device performance. In some cases, the remained p-GaN in the ungated region can exist as a result of under-etching, and can act like a charge reservoir in the p-GaN gate power device. In this reported work, the effect of this remained p-GaN layer is investigated for the first time. The main effect of the thick remained p-GaN on the ungated region is the increments of turn-off energy loss (E-off) in spite of the similar turn-on energy loss (E-on). This is related to the hole trapping in the remained p-GaN region which is observed by the change of turn-off gate voltages.
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