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Flexoelectric Control of Defect Formation in Ferroelectric Epitaxial Thin Films
- Authors
- Lee, Daesu; Jeon, Byung Chul; Yoon, Aram; Shin, Yeong Jae; Lee, Myang Hwan; Song, Tae Kwon; Bu, Sang Don; Kim, Miyoung; Chung, Jin-Seok; Yoon, Jong-Gul; Noh, Tae Won
- Issue Date
- 6-Aug-2014
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- defect engineering; epitaxial thin film; ferroelectric; flexoelectric; strain gradient
- Citation
- ADVANCED MATERIALS, v.26, no.29, pp.5005 - 5011
- Journal Title
- ADVANCED MATERIALS
- Volume
- 26
- Number
- 29
- Start Page
- 5005
- End Page
- 5011
- ISSN
- 0935-9648
- Abstract
- Flexoelectric control of defect formation and associated electronic function is demonstrated in ferroelectric BiFeO3 thin films. An intriguing, so far never demonstrated, effect of internal electric field (E-int) on defect formation is explored by a means of flexoelectricity. Our study provides novel insight into defect engineering, as well as allows a pathway to design defect configuration and associated electronic function.
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Related Researcher
- Chung, Jin Seok
- College of Natural Sciences (Department of Physics)