Modification of Schottky barrier properties of Au/n-type Ge Schottky barrier diode using monolayer graphene interlayer
- Authors
- Khurelbaatar, Zagarzusem; Kil, Yeon-Ho; Yun, Hyung-Joong; Shim, Kyu-Hwan; Nam, Jung Tae; Kim, Keun-Soo; Lee, Sang-Kwon; Choi, Chel-Jong
- Issue Date
- Nov-2014
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Schottky barrier diode; n-Type Ge; Graphene interlayer; Fermi-level depinning
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.614, pp 323 - 329
- Pages
- 7
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 614
- Start Page
- 323
- End Page
- 329
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/11583
- DOI
- 10.1016/j.jallcom.2014.06.132
- ISSN
- 0925-8388
1873-4669
- Abstract
- We fabricated the Au/n-type Ge Schottky barrier diodes (SBDs) by introducing a graphene interlayer in-between Au and n-type Ge. Then we investigated the effects of the graphene interlayer on their electrical properties using the current-voltage (I-V) and capacitance-voltage (C-V) characteristics. Schottky barrier properties of Au/n-type Ge SBDs with and without graphene interlayer were cross-checked by various analysis techniques such as forward I-V, C-V, Cheung's, and Norde's methods. The Au/n-type Ge SBD with graphene interlayer exhibited lower ideality factor and series resistance, as compared to Au/n-type Ge SBD. The barrier height of Au/graphene/n-type Ge SBD was higher than that of Au/n-type Ge SBD. It is observed that the Fermi-level pinning at Au/Ge Schottky junction was released by the graphene interlayer. The Fermi-level depinning behavior of Ge was also observed in the graphene-interlayered Ti contact to n-type Ge. The introduction of the graphene interlayer to Au/n-type Ge SBD led to a significant reduction of interface state density (N-ss) associated with the passivation of Ge surface by graphene, which could be responsible for minimizing the Fermi-level pinning of Ge. (C) 2014 Elsevier B.V. All rights reserved.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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