Non-Volatile Organic Memory Devices Based on Solution-Processed 2,8-Difluoro-5,11-Bis(triethylsilylethynyl) Anthradithiophene Small Molecules
- Authors
- Kim, Jaekyun; Park, Sung Kyu
- Issue Date
- Nov-2014
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- diF-TESADT; Thin Film Transistor; Organic Memory; Photoinduced Writing
- Citation
- SCIENCE OF ADVANCED MATERIALS, v.6, no.11, pp 2400 - 2405
- Pages
- 6
- Journal Title
- SCIENCE OF ADVANCED MATERIALS
- Volume
- 6
- Number
- 11
- Start Page
- 2400
- End Page
- 2405
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/11697
- DOI
- 10.1166/sam.2014.2197
- ISSN
- 1947-2935
1947-2943
- Abstract
- Solution-processed 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic thin-film transistors (OTFTs) were fabricated and investigated to explore their potential for organic memory applications. A highly light-sensitive diF-TESADT OTFTs exhibited an almost irreversible threshold voltage shift (Delta V-TH) due to charge carrier trapping at gate dielectric interface under light illumination, i.e., photo-gating. The photo-assisted gate biasing was found to produce a more prominent Delta V-TH, indicating a wider window for memory applications. Further analysis revealed that the magnitude of Delta V-TH was proportional to electrical gate pulse duration, and the diF-TESADT OTFTs showed stable operation after tens of write/erase cycles. The high retention and stable properties of the diF-TESADT OTFTs demonstrate that the devices can be a promising platform for next generation photo-assisted memory and sensor systems.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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