High Performance Organic Nonvolatile Flash Memory Transistors with High-Resolution Reduced Graphene Oxide Patterns as a Floating Gate
- Authors
- Chung, Dae Sung; Lee, Sung Min; Back, Jang Yeol; Kwon, Soon-Ki; Kim, Yun-Hi; Chang, Suk Tai
- Issue Date
- Jun-2014
- Publisher
- AMER CHEMICAL SOC
- Keywords
- organic devices; nonvolatile memory devices; reduced graphene oxide; thin films; micropatterning; charge-trapping layers
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.6, no.12, pp 9524 - 9529
- Pages
- 6
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 6
- Number
- 12
- Start Page
- 9524
- End Page
- 9529
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/12126
- DOI
- 10.1021/am501909v
- ISSN
- 1944-8244
1944-8252
- Abstract
- High-performance organic nonvolatile memory transistors (ONVMTs) are demonstrated, the construction of which is based on novel integration of a highly conductive polymer as a semiconductor layer, hydroxyl-free polymer as a tunneling dielectric layer, and high-resolution reduced graphene oxide (rGO) patterns as a floating gate. Finely patterned rGO, with a line width of 20-120 mu m, was embedded between SiO2 and the polymer dielectric layer, which functions as a nearly isolated charge-trapping center. The resulting ONVMTs demonstrated ideal memory behavior, and the transfer characteristics promptly responded to writing and erasing the gate bias. In particular, the retention time of written/erased states tended to increase as the rGO line width was reduced, implying that the line width is a critical factor in suppressing charge release from rGO. Using a 20-mu m-wide rGO pattern, a nonvolatile large memory window (>20 V) was retained for more than 5 x 10(5) s, which is 50 times longer than non-patterned rGO films.
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