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Enhanced thermoelectric properties of thermal treated Sb2Te3 thin films
- Authors
- Hong, Ji-Eun; Lee, Sang-Kwon; Yoon, Soon-Gil
- Issue Date
- Jan-2014
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Sb2Te3 thin films; Radio-frequency sputtering; Theromoelectric properties; Oxygen incorporation; Annealing temperature
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.583, pp 111 - 115
- Pages
- 5
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 583
- Start Page
- 111
- End Page
- 115
- ISSN
- 0925-8388
1873-4669
- Abstract
- The 500 nm-thick Sb2Te3 films were deposited onto SiO2/Si substrates using rf magnetron sputtering and annealment at various temperatures for 5 min under an Ar atmosphere. Oxygen incorporated into the films contributed to the compositional stability at an annealing temperature of 320 degrees C. Samples annealed at 320 degrees C exhibited conductivity of 1824 S/cm, Seebeck coefficient of 283 mu V/K, and a thermal conductivity of 3.0 +/- 0.20 W/mK at room temperature, and thermoelectric figure of merit (ZT) of approximately 1.5. (C) 2013 Elsevier B.V. All rights reserved.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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