Enhanced Bias Stability of Solution-Processed Zinc-Tin-Oxide Thin Film Transistors Using Self-Assembled Monolayer as a Selective Channel Passivation
- Authors
- Heo, Jae-Sang; Park, Sung-Kyu
- Issue Date
- Oct-2013
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- ZTO TFTs; Self-Assembled Monolayer (SAM); Passivation; Bias-Stability
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.10, pp 7056 - 7058
- Pages
- 3
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 13
- Number
- 10
- Start Page
- 7056
- End Page
- 7058
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/14277
- DOI
- 10.1166/jnn.2013.7799
- ISSN
- 1533-4880
1533-4899
- Abstract
- The enhanced positive bias stability of amorphous zinc-tin-oxide thin-film transistors (a-ZTO TFTs) were obtained by applying self-assembled monolayer (SAM) as a selective passivation layer on the metal-oxide back channel area. The a-ZTO TFTs with passivation layers such as poly(methyl methacylate) (PMMA), SAM, and SAM/PMMA were fabricated by simple solution methods. After deposition of the passivation layers, the electrical characteristics of a-ZTO TFTs have not been changed and the threshold voltage shift (Delta V-th) under gate-bias stress for around 10(4) seconds was improved. The Delta V-th of the devices with PMMA, SAM, and SAM/PMMA dual layer were 3.79 V, 3.2 V, and 2.17 V, respectively.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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