Detailed Information
Cited 0 time in 
Cited 1 time in 
Cited 1 time in
Metadata Downloads
First-Principles Study of InAs/GaSb Semiconductor Superlattice Structures
- Authors
- Efimov, Oleg; Yoon, Young-Gui
- Issue Date
- Aug-2013
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- InAs; GaSb; Interface; Superlattice; Energetics
- Citation
- JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, v.10, no.8, pp 1684 - 1687
- Pages
- 4
- Journal Title
- JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE
- Volume
- 10
- Number
- 8
- Start Page
- 1684
- End Page
- 1687
- ISSN
- 1546-1955
1546-1963
- Abstract
- We study the energetics of (InAs)(n)/(GaSb)(n) superlattices, where n ranges from 1 to 15, with (001), (110), and (111) interfaces from first-principles. The total energy of the unrelaxed superlattice structure with respect to that of the bulk equilibrium structure is found to be proportional to the number of In-Sb and Ga-As bonds at the interface. Relaxation of the structure leads to decrease in total energy, which is correlated with the interface volume.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.