Reduction Process of Dislocation and Standby Leakage Current for Embedded Flash Memory Using Nano-Scale Integration
- Authors
- Sun, Jong-Won; Park, Ji Hwan; Yang, Taek-Seung; Choi, Heesoo; Cui, Yinhua; Choi, Eunmi; Kim, Areum; Oh, Lee Seul; Lee, Sun Jae; Park, Hyunjin; Kim, Chang Hyun; Kim, Soo-Kil; Son, Hyungbin; Lee, Dong Hyun; Pyo, Sung Gyu
- Issue Date
- Jun-2013
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Embedded Flash Memory; Dislocation; Leakage Current; Rapid Thermal Oxidation; Nano Integration
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.6, pp 4291 - 4296
- Pages
- 6
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 13
- Number
- 6
- Start Page
- 4291
- End Page
- 4296
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/14604
- DOI
- 10.1166/jnn.2013.7172
- ISSN
- 1533-4880
1533-4899
- Abstract
- We determined that the use of densification, sacrificial oxidation, gate oxidation and source/drain implantation has the capability to reduce the dislocation. A dislocation-free process is proposed, and its mechanism presented in embedded flash memory. The dislocation decreased when n-type ions were implanted at a low energy level for source and drain. A dry oxidation process using only oxygen without hydrogen and oxidation for logic gates led to the formation of a sacrificial oxide on the rapid thermal oxidation (RTP) methods without densification after gap-filling as reducing dislocation processes. These methods dramatically reduced the standby leakage current.
- Files in This Item
-
- Appears in
Collections - College of Engineering > School of Chemical Engineering and Material Science > 1. Journal Articles
- College of ICT Engineering > School of Integrative Engineering > 1. Journal Articles
- College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.