Flexible metal-oxide devices made by room-temperature photochemical activation of sol-gel films
- Authors
- Kim, Yong-Hoon; Heo, Jae-Sang; Kim, Tae-Hyeong; Park, Sungjun; Yoon, Myung-Han; Kim, Jiwan; Oh, Min Suk; Yi, Gi-Ra; Noh, Yong-Young; Park, Sung Kyu
- Issue Date
- Sep-2012
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- NATURE, v.489, no.7414, pp 128 - U191
- Journal Title
- NATURE
- Volume
- 489
- Number
- 7414
- Start Page
- 128
- End Page
- U191
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/15129
- DOI
- 10.1038/nature11434
- ISSN
- 0028-0836
1476-4687
- Abstract
- Amorphous metal-oxide semiconductors have emerged as potential replacements for organic and silicon materials in thin-film electronics. The high carrier mobility in the amorphous state, and excellent large-area uniformity, have extended their applications to active-matrix electronics, including displays, sensor arrays and X-ray detectors(1-7). Moreover, their solution processability and optical transparency have opened new horizons for low-cost printable and transparent electronics on plastic substrates(8-13). But metal-oxide formation by the sol-gel route requires an annealing step at relatively high temperature(2,14-19), which has prevented the incorporation of these materials with the polymer substrates used in high-performance flexible electronics. Here we report a general method for forming high-performance and operationally stable metal-oxide semiconductors at room temperature, by deep-ultraviolet photochemical activation of sol-gel films. Deep-ultraviolet irradiation induces efficient condensation and densification of oxide semicon-ducting films by photochemical activation at low temperature. This photochemical activation is applicable to numerous metal-oxide semiconductors, and the performance (in terms of transistor mobility and operational stability) of thin-film transistors fabricated by this route compares favourably with that of thin-film transistors based on thermally annealed materials. The field-effect mobilities of the photo-activated metal-oxide semiconductors are as high as 14 and 7 cm(2) V-1 s(-1) (with an Al2O3 gate insulator) on glass and polymer substrates, respectively; and seven-stage ring oscillators fabricated on polymer substrates operate with an oscillation frequency of more than 340 kHz, corresponding to a propagation delay of less than 210 nanoseconds per stage.
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