Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices
DC Field | Value | Language |
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dc.contributor.author | Lee, Jung-Kyu | - |
dc.contributor.author | Jung, Sunghun | - |
dc.contributor.author | Park, Jinwon | - |
dc.contributor.author | Chung, Sung-Woong | - |
dc.contributor.author | Roh, Jae Sung | - |
dc.contributor.author | Hong, Sung-Joo | - |
dc.contributor.author | Cho, Il Hwan | - |
dc.contributor.author | Kwon, Hyuck-In | - |
dc.contributor.author | Park, Chan Hyeong | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.contributor.author | Lee, Jong-Ho | - |
dc.date.available | 2019-03-09T02:42:28Z | - |
dc.date.issued | 2012-09 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.issn | 1077-3118 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/15130 | - |
dc.description.abstract | Resistive-switching and current conduction mechanisms have been studied in TiN/Ti/TiOx/HfOx/TiN resistive-switching random access memories (RRAMs). From I-V characteristics and temperature measurement, thermionic emission is found to be the most appropriate mechanism representing the dominant current conduction in all the bias regions and resistance states. Low-frequency noise power spectrum is measured to analyze accurately the conduction mechanism, which corroborates the thermionic-emission. Also, using the migration of oxygen ions depending on the polarity of the applied field, we propose the resistive-switching model of a double-layered RRAM to explain the unique resistive-switching characteristics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751248] | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.4751248 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.101, no.10 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000309072800083 | - |
dc.identifier.scopusid | 2-s2.0-84866029476 | - |
dc.citation.number | 10 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 101 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordPlus | FILMS | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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