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Cited 36 time in webofscience Cited 44 time in scopus
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Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices

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dc.contributor.authorLee, Jung-Kyu-
dc.contributor.authorJung, Sunghun-
dc.contributor.authorPark, Jinwon-
dc.contributor.authorChung, Sung-Woong-
dc.contributor.authorRoh, Jae Sung-
dc.contributor.authorHong, Sung-Joo-
dc.contributor.authorCho, Il Hwan-
dc.contributor.authorKwon, Hyuck-In-
dc.contributor.authorPark, Chan Hyeong-
dc.contributor.authorPark, Byung-Gook-
dc.contributor.authorLee, Jong-Ho-
dc.date.available2019-03-09T02:42:28Z-
dc.date.issued2012-09-
dc.identifier.issn0003-6951-
dc.identifier.issn1077-3118-
dc.identifier.urihttps://scholarworks.bwise.kr/cau/handle/2019.sw.cau/15130-
dc.description.abstractResistive-switching and current conduction mechanisms have been studied in TiN/Ti/TiOx/HfOx/TiN resistive-switching random access memories (RRAMs). From I-V characteristics and temperature measurement, thermionic emission is found to be the most appropriate mechanism representing the dominant current conduction in all the bias regions and resistance states. Low-frequency noise power spectrum is measured to analyze accurately the conduction mechanism, which corroborates the thermionic-emission. Also, using the migration of oxygen ions depending on the polarity of the applied field, we propose the resistive-switching model of a double-layered RRAM to explain the unique resistive-switching characteristics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751248]-
dc.language영어-
dc.language.isoENG-
dc.publisherAMER INST PHYSICS-
dc.titleAccurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices-
dc.typeArticle-
dc.identifier.doi10.1063/1.4751248-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.101, no.10-
dc.description.isOpenAccessN-
dc.identifier.wosid000309072800083-
dc.identifier.scopusid2-s2.0-84866029476-
dc.citation.number10-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume101-
dc.type.docTypeArticle-
dc.publisher.location미국-
dc.subject.keywordPlusFILMS-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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