Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices
- Authors
- Lee, Jung-Kyu; Jung, Sunghun; Park, Jinwon; Chung, Sung-Woong; Roh, Jae Sung; Hong, Sung-Joo; Cho, Il Hwan; Kwon, Hyuck-In; Park, Chan Hyeong; Park, Byung-Gook; Lee, Jong-Ho
- Issue Date
- Sep-2012
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.101, no.10
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 101
- Number
- 10
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/15130
- DOI
- 10.1063/1.4751248
- ISSN
- 0003-6951
1077-3118
- Abstract
- Resistive-switching and current conduction mechanisms have been studied in TiN/Ti/TiOx/HfOx/TiN resistive-switching random access memories (RRAMs). From I-V characteristics and temperature measurement, thermionic emission is found to be the most appropriate mechanism representing the dominant current conduction in all the bias regions and resistance states. Low-frequency noise power spectrum is measured to analyze accurately the conduction mechanism, which corroborates the thermionic-emission. Also, using the migration of oxygen ions depending on the polarity of the applied field, we propose the resistive-switching model of a double-layered RRAM to explain the unique resistive-switching characteristics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751248]
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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