Solution-Processed Amorphous Zn-In-Sn-O/ZrO2 Based Field-Effect Transistors

Abstract

Metal oxide based transparent electronic materials have been intensively studied as an alternative to amorphous Si thin-film transistors (TFTs) for large area electronic applications. Most of these investigations are focused on relatively expensive vacuum processing techniques, such as pulsed laser deposition, atomic layer deposition, and sputtering. However, solution processing methodologies such as chemical bath deposition, ink-jet printing, and spin-coating are promising to realize low cost large area deposition. Herein, we report the integration of a solution-processed metal oxide semiconductor with a high-k ZrO2 dielectric for TFT fabrication. The amorphous Zn-In-Sn-O based TFTs exhibit high electron mobility (similar to 14 cm(2)/Vs) and high on/off ratios (similar to 10(6)) with the ZrO2 dielectric. Additionally, the device functions at low operating voltages (similar to 4 V) because of the large capacitance (710 nF/cm(2)) of the dielectric material. The successful fabrication of the solution-processed high performance TFTs may facilitate the realization of large area, high speed, and low power applications.