Effects of Undoped GaN Capping Layer on p-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors
DC Field | Value | Language |
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dc.contributor.author | Eo, Myeong-Kyu | - |
dc.contributor.author | Kwon, Hyuck-In | - |
dc.date.available | 2019-01-22T14:22:35Z | - |
dc.date.issued | 2016-11 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.issn | 1533-4899 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/1665 | - |
dc.description.abstract | We investigated the effects of an undoped GaN (u-GaN) capping layer in normally-off p-GaN gate AlGaN/GaN heterostructure field-effect transistors (HFETs). Three types of AlGaN/GaN HFETs were fabricated: without a u-GaN capping layer, with a u-GaN capping layer, and with a stack of a u-GaN capping layer and a SiN X passivation layer. The turn-on voltages were nearly identical for all the devices, but the drain current of the device without a capping layer was significantly lower than those of the devices with a capping layer. We also observed a lower current collapse and a considerably improved electrical stability under the OFF-state stress in the devices with a u-GaN capping layer compared with the device without a u-GaN capping layer. The experimental results show that a u-GaN capping layer can effectively suppress the surface trap states in p-GaN gate AlGaN/GaN HFETs. | - |
dc.format.extent | 5 | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Effects of Undoped GaN Capping Layer on p-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/jnn.2016.13514 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.11, pp 11386 - 11390 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000387278200050 | - |
dc.identifier.scopusid | 2-s2.0-84992502918 | - |
dc.citation.endPage | 11390 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 11386 | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 16 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | Undoped GaN (u-GaN) Capping Layer | - |
dc.subject.keywordAuthor | p-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors | - |
dc.subject.keywordAuthor | Current Collapse | - |
dc.subject.keywordAuthor | Passivation | - |
dc.subject.keywordPlus | CURRENT COLLAPSE | - |
dc.subject.keywordPlus | HEMTS | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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