Effects of Undoped GaN Capping Layer on p-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors
- Authors
- Eo, Myeong-Kyu; Kwon, Hyuck-In
- Issue Date
- Nov-2016
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Undoped GaN (u-GaN) Capping Layer; p-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors; Current Collapse; Passivation
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.11, pp 11386 - 11390
- Pages
- 5
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 16
- Number
- 11
- Start Page
- 11386
- End Page
- 11390
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/1665
- DOI
- 10.1166/jnn.2016.13514
- ISSN
- 1533-4880
1533-4899
- Abstract
- We investigated the effects of an undoped GaN (u-GaN) capping layer in normally-off p-GaN gate AlGaN/GaN heterostructure field-effect transistors (HFETs). Three types of AlGaN/GaN HFETs were fabricated: without a u-GaN capping layer, with a u-GaN capping layer, and with a stack of a u-GaN capping layer and a SiN X passivation layer. The turn-on voltages were nearly identical for all the devices, but the drain current of the device without a capping layer was significantly lower than those of the devices with a capping layer. We also observed a lower current collapse and a considerably improved electrical stability under the OFF-state stress in the devices with a u-GaN capping layer compared with the device without a u-GaN capping layer. The experimental results show that a u-GaN capping layer can effectively suppress the surface trap states in p-GaN gate AlGaN/GaN HFETs.
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