Low-Frequency Noise Properties in P-Type SnO Thin-Film Transistors
DC Field | Value | Language |
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dc.contributor.author | Jeong, Chan-Yong | - |
dc.contributor.author | Lee, Jeong-Hwan | - |
dc.contributor.author | Choi, Yong-Jin | - |
dc.contributor.author | Lee, Chang-Woo | - |
dc.contributor.author | Song, Sang-Hun | - |
dc.contributor.author | Kwon, Hyuck-In | - |
dc.date.available | 2019-01-22T14:22:35Z | - |
dc.date.issued | 2016-11 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.issn | 1533-4899 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/1666 | - |
dc.description.abstract | We examine the low-frequency noise (LFN) properties of p-type tin monoxide (SnO) thin-film transistors (TFTs). The noise power spectral densities of the drain current are proportional to 1/f(alpha) with alpha similar to 1 in the frequency range 10 Hz to 1 kHz. The LFN from the p-type SnO TFT is successfully interpreted by the correlated carrier number-mobility fluctuation model, but neither the mobility fluctuation model nor the carrier number fluctuation model can explain the observed LFN behaviors. The density of near-interface insulator traps that can exchange charge carriers with the underlying SnO channel layer is found to be 5.2x10(21) eV(-1) cm(-3), which is approximately one or two orders of magnitude higher than that of the n-type amorphous indium-gallium-zinc oxide TFTs. The high density of the near-interface insulator trap from the SnO TFT is considered to be a result of the high degree of disorder of the SnO channel layer. | - |
dc.format.extent | 5 | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Low-Frequency Noise Properties in P-Type SnO Thin-Film Transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/jnn.2016.13513 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.11, pp 11381 - 11385 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000387278200049 | - |
dc.identifier.scopusid | 2-s2.0-84992530843 | - |
dc.citation.endPage | 11385 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 11381 | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 16 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | P-Type SnO TFTs | - |
dc.subject.keywordAuthor | Low-Frequency Noise | - |
dc.subject.keywordAuthor | Correlated Carrier Number-Mobility Fluctuation Model | - |
dc.subject.keywordAuthor | Near-Interface Insulator Trap | - |
dc.subject.keywordPlus | BIAS STRESS STABILITY | - |
dc.subject.keywordPlus | TIN MONOXIDE | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | METAL | - |
dc.subject.keywordPlus | TFT | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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