Low-Frequency Noise Properties in P-Type SnO Thin-Film Transistors
- Authors
- Jeong, Chan-Yong; Lee, Jeong-Hwan; Choi, Yong-Jin; Lee, Chang-Woo; Song, Sang-Hun; Kwon, Hyuck-In
- Issue Date
- Nov-2016
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- P-Type SnO TFTs; Low-Frequency Noise; Correlated Carrier Number-Mobility Fluctuation Model; Near-Interface Insulator Trap
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.11, pp 11381 - 11385
- Pages
- 5
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 16
- Number
- 11
- Start Page
- 11381
- End Page
- 11385
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/1666
- DOI
- 10.1166/jnn.2016.13513
- ISSN
- 1533-4880
1533-4899
- Abstract
- We examine the low-frequency noise (LFN) properties of p-type tin monoxide (SnO) thin-film transistors (TFTs). The noise power spectral densities of the drain current are proportional to 1/f(alpha) with alpha similar to 1 in the frequency range 10 Hz to 1 kHz. The LFN from the p-type SnO TFT is successfully interpreted by the correlated carrier number-mobility fluctuation model, but neither the mobility fluctuation model nor the carrier number fluctuation model can explain the observed LFN behaviors. The density of near-interface insulator traps that can exchange charge carriers with the underlying SnO channel layer is found to be 5.2x10(21) eV(-1) cm(-3), which is approximately one or two orders of magnitude higher than that of the n-type amorphous indium-gallium-zinc oxide TFTs. The high density of the near-interface insulator trap from the SnO TFT is considered to be a result of the high degree of disorder of the SnO channel layer.
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