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Characterization of Atomic Layer Deposited Al2O3/HfO2 and Ta2O5/Al2O3 Combination Stacks
- Authors
- Nam, Minwoo; Kim, Areum; Kang, Keunwon; Choi, Eunmi; Kwon, Soon Hyeong; Lee, Seon Jae; Pyo, Sung Gyu
- Issue Date
- Oct-2016
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Al2O3; High-k Dielectric; Leakage Current; Metal Insulator Metal (MIM); PEALD
- Citation
- Science of Advanced Materials, v.8, no.10, pp 1958 - 1962
- Pages
- 5
- Journal Title
- Science of Advanced Materials
- Volume
- 8
- Number
- 10
- Start Page
- 1958
- End Page
- 1962
- ISSN
- 1947-2935
1947-2943
- Abstract
- We have integrated manufacturable and cost-effective 4 fF/mu m(2) and 8 fF/mu m(2) metal-insulator-metal capacitors with dielectrics by plasma enhanced-atomic layer deposition (PE-ALD), where, the Al interconnects the process for analog/mixed signal technology. The capacitance density, voltage linearity, leakage current, and breakdown voltage properties are evaluated not only for the single layer films of Al2O3, Ta2O5, and HfO2 but also for the combination stacks of Al2O3/Ta2O5/Al2O3 and Al2O3/HfO2/Al2O3 laminated-layers. In comparison, HfO2 as a single layer and Al2O3/HfO2/Al2O3 as a laminated-layer shows better performance than the others.
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