Characterization of a co-evaporated Cu2SnS3 thin-film solar cell
- Authors
- Kim, Yongshin; Choi, In-Hwan
- Issue Date
- Jan-2019
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Copper tin sulfide; Evaporation; Thin film; Solar cell; Admittance
- Citation
- THIN SOLID FILMS, v.669, pp 351 - 354
- Pages
- 4
- Journal Title
- THIN SOLID FILMS
- Volume
- 669
- Start Page
- 351
- End Page
- 354
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/18343
- DOI
- 10.1016/j.tsf.2018.11.023
- ISSN
- 0040-6090
- Abstract
- Cu2SnS3 (CTS) absorber layer was deposited onto a Mo-coated soda-lime glass substrate by sulfurizing a coevaporated Cu-SnS precursor thin film. Phase composition and quality of the layer were examined by X-ray diffraction, Raman spectroscopy and scanning electron microscopy. A solar cell with such CTS absorber layer was characterized by current-voltage, external quantum efficiency, capacitance-voltage, and admittance spectroscopy. The CTS solar cell exhibited a maximum conversion efficiency of 2.01%. Capacitance-voltage measurement showed that CTS absorber had hole carrier concentration of 6.37 x 10(16) cm(-3) and depletion width of 82 nm at room temperature. Admittance spectroscopy showed capacitance steps that might have originated from a deep-level with activation energy and pre-exponential factor of about 0.11 eV and 8.31 x 10(4) s(-1)K(-2), respectively. The concentration of the deep-level defects was estimated to be 5.23 x 10(18) cm(-3).
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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