Highly sensitive and selective room-temperature NO 2 gas-sensing characteristics of SnO X -based p-type thin-film transistor
- Authors
- Jeong, H.-S.; Park, M.-J.; Kwon, S.-H.; Joo, H.-J.; Kwon, Hyuck-In
- Issue Date
- Jun-2019
- Publisher
- Elsevier B.V.
- Keywords
- P-type metal oxide semiconductor; SnOX; SnO; NO2 gas sensing; Thin-film transistor
- Citation
- Sensors and Actuators, B: Chemical, v.288, pp 625 - 633
- Pages
- 9
- Journal Title
- Sensors and Actuators, B: Chemical
- Volume
- 288
- Start Page
- 625
- End Page
- 633
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/18562
- DOI
- 10.1016/j.snb.2019.03.046
- ISSN
- 0925-4005
- Abstract
- The high-performance p-type metal-oxide-semiconductor (MOS)-based gas sensor is an important subject of research in the field of gas-sensing technology. In this work, we demonstrated a p-type MOS-based thin-film transistor (TFT) nitrogen dioxide (NO 2 ) gas sensor that used tin oxide (SnO X ) for both the channel and sensing layers. The crystalline status, surface morphology, and atomic-bonding configuration of the thin-film were examined using X-ray diffraction, field emission-scanning electron microscopy, and X-ray photoelectron spectroscopy. The results indicated that the deposited thin-film was mainly composed of polycrystalline SnO with a tetragonal structure. The fabricated p-type SnO X TFT showed a maximum response value of 19.4-10 ppm NO 2 at room temperature (RT, 25 °C) when operated in the subthreshold region, which was significantly higher than that of 2.8–10 ppm NO 2 obtained from a p-type SnO X thin-film chemiresistor at RT. In addition, the SnO X TFT gas sensor showed significantly higher sensitivity to NO 2 gas than to other target gases such as NH 3 , H 2 S, CO 2 , and CO at RT. To the best of our knowledge, this is the first study to a p-type MOS-based field-effect transistor-type gas sensor. Our experimental results demonstrate that the p-type SnO X TFT is a promising gas sensor that can operate at RT with high sensitivity and selectivity to NO 2 gas. © 2019 Elsevier B.V.
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