Fundamental limits for near-junction conduction cooling of high power GaN-on-diamond devices
- Authors
- Song, C.; Kim, J.; Lee, H.; Cho, J.
- Issue Date
- Jun-2019
- Publisher
- Elsevier Ltd
- Keywords
- A. GaN-on-diamond; D. Near-junction thermal transport; D. Thermal boundary resistance; D. Thermal conductivity
- Citation
- Solid State Communications, v.295, pp 12 - 15
- Pages
- 4
- Journal Title
- Solid State Communications
- Volume
- 295
- Start Page
- 12
- End Page
- 15
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/18590
- DOI
- 10.1016/j.ssc.2019.03.013
- ISSN
- 0038-1098
1879-2766
- Abstract
- The integration of differing materials can enable breakthrough performance for semiconductor devices. One example is the integration of gallium nitride (GaN) and diamond to form GaN-on-diamond, which enables high-power GaN devices to achieve extreme power densities and, arguably, approaches fundamental limits for conduction cooling. Here, we examine the fundamental limits for near-junction phonon conduction cooling of GaN-on-diamond devices via finite element calculations of their lowest possible thermal resistance. A semi-classical transport theory for phonons interacting with interfaces and defects is used to calculate the in-plane thermal conductivity of a GaN epilayer and thereby accurately account for the thermal spreading resistance of the GaN layer. The device thermal resistance of a state-of-the-art GaN-on-diamond structure is predicted to be ∼13.0 K mm W −1 for a 12 finger device with 30 μm gate-to-gate spacing and a power dissipation of 5 W mm −1 . For the same multifinger cell geometry and dissipated power, device thermal resistances as low as ∼10.0 K mm W −1 may be possible with assuming anisotropic but homogeneous diamond, as well as the absence of phonon scattering by external defects in the GaN layer and interface. © 2019 Elsevier Ltd
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