Structural, Optical and Electrical Properties of NiO Thin Films Deposited on SiC Substrate by Using a Solution Process

Abstract

In this study, we report on the fabrication of p-NiO/n-4H-SiC heterostructure diodes by using a solution process. The NiO layer was formed from mixing nickel acetate tetrahydrate as a nickel precursor, 2-methoxyethanol as a solvent and monoethanolamine as a stabilizer and spin coating onto a SiC substrate. We compared the properties of NiO layers resulting from different molar ratios, ranging from 0.5 to 1.5 M. I-V characteristics of NiO/4H-SiC heterojunction diodes exhibited a nonlinear curve typical of p-n junctions with a turn-on voltage and a rectification ratio of 2.0 V and similar to 10(7), respectively.