Effect of liquid gate bias rising time in pH sensors based on Si nanowire ion sensitive field effect transistors
- Authors
- Jang, Jungkyu; Choi, Sungju; Kim, Jungmok; Park, Tae Jung; Park, Byung-Gook; Kim, Dong Myong; Choi, Sung-Jin; Lee, Seung Min; Kim, Dae Hwan; Mo, Hyun-Sun
- Issue Date
- Feb-2018
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Liquid gate bias; Rising time; Transient response; ISFET; Si nanowire; Drift/diffusion of mobile ions in analyte
- Citation
- SOLID-STATE ELECTRONICS, v.140, pp 109 - 114
- Pages
- 6
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 140
- Start Page
- 109
- End Page
- 114
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/18712
- DOI
- 10.1016/j.sse.2017.10.027
- ISSN
- 0038-1101
1879-2405
- Abstract
- In this study, we investigate the effect of rising time (TR) of liquid gate bias (VLG) on transient responses in pH sensors based on Si nanowire ion-sensitive field-effect transistors (ISFETs). As TR becomes shorter and pH values decrease, the ISFET current takes a longer time to saturate to the pH-dependent steady-state value. By correlating VLG with the internal gate-to-source voltage of the ISFET, we found that this effect occurs when the drift/diffusion of mobile ions in analytes in response to VLG is delayed. This gives us useful insight on the design of ISFET-based point-of-care circuits and systems, particularly with respect to determining an appropriate rising time for the liquid gate bias.
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- Appears in
Collections - College of Natural Sciences > Department of Chemistry > 1. Journal Articles
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