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The dry etching property of TiO2 thin films using metal-insulator-metal capacitor in inductively coupled plasma system
- Issue Date
- Jul-2012
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Etch; TiO2; Inductively coupled plasma; X-ray photoelectron spectroscopy
- Citation
- VACUUM, v.86, no.12, pp 2152 - 2157
- Pages
- 6
- Journal Title
- VACUUM
- Volume
- 86
- Number
- 12
- Start Page
- 2152
- End Page
- 2157
- ISSN
- 0042-207X
- Abstract
- In this work, we investigated the etching characteristics of TiO2 thin films and the selectivity of TiO2 to SiO2 in a BCl3/Ar inductively coupled plasma (ICP) system. The maximum etch rate of 84.68 nm/min was obtained for TiO2 thin films at a gas mixture ratio of BCl3/Ar (25:75%). In addition, etch rates were measured as a function of etching parameters, such as the RF power, DC-bias voltage and process pressure. Using the X-ray photoelectron spectroscopy analysis the accumulation of chemical reaction on the etched surface was investigated. Based on these data, the ion-assisted physical sputtering was proposed as the main etch mechanism for the BCl3-containing plasmas. (C) 2012 Elsevier Ltd. All rights reserved.
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