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Deep centers in a CuInGaSe2/CdS/ZnO:B solar cell
- Authors
- Choi, In-Hwan; Choi, Chul-Hwan; Lee, Joo-Won
- Issue Date
- Jun-2012
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- CIGS solar cells; deep centers; deep-level transient spectroscopy; electron-beam induced currents
- Citation
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.209, no.6, pp 1192 - 1197
- Pages
- 6
- Journal Title
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Volume
- 209
- Number
- 6
- Start Page
- 1192
- End Page
- 1197
- ISSN
- 1862-6300
1862-6319
- Abstract
- CuInGaSe2(CIGS)/CdS/ZnO:B heterojunction solar cells and CIGS/Al Schottky junction diodes were fabricated, and the defect centers were examined by capacitancevoltage (CV) measurements and deep-level transient spectroscopy (DLTS). The homogeneity of the junction in the CIGS heterojunction solar cell was examined by electron-beam induced current (EBIC) measurements. The distribution of the defect concentrations in the CIGS absorber layer of the CIGS/CdS/ZnO:B heterojunction changed remarkably with depth. On the other hand, the defect distribution in the CIGS layer of the CIGS Schottky junction was quasi-homogeneous. One electron and one hole trap were observed from CIGS Schottky junction, whereas one electron trap and two hole traps were found in the CIGS/CdS/ZnO:B heterojunction.
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