Dry etch properties of IZO thin films in a CF4/Ar adaptively coupled plasma system

Abstract

In this study, we investigated to the etch characteristics of indium zinc oxide (IZO) thin films in a CF4/Ar plasma, namely, etch rate and selectivity toward SiO2. A maximum etch rate of 76.6 nm/min was obtained for IZO thin films at a gas mixture ratio of CF4/Ar (25:75%). In addition, etch rates were measured as a function of etching parameters, including adaptively coupled plasma chamber pressure. X-ray photoelectron spectroscopy analysis showed efficient destruction of the oxide bonds by ion bombardment, as well as accumulation of low volatile reaction products on the surface of the etched IZO thin films. Field emission Auger electron spectroscopy analysis was used to examine the efficiency of ion-stimulated desorption of the reaction products. (C) 2011 Elsevier Ltd. All rights reserved.